A unique structure of a defect of the SiC crystal, called a screw
dislocation, has been shown through the evaluation of the structure of the
screw dislocation, which is made by using LACBED (large-angle convergent-beam
electron diffraction).
As known, the SiC-based power device is one of the next generation
power devices.
The screw dislocation is known as one of the defects that the SiC
crystal has.
An inverter including the SiC power device having such a defect
inevitably suffers from degradation of its performance.
It has been recognized that the direction in which the screw
dislocation extends is the same as of the displacement of the crystal.
The screw dislocation extends within and through the crystal.
It has been indicated that the screw dislocation is a unique
dislocation in that it contains a displacement having the direction (axis “a”)
vertical to the axis “c” along which the defect extends, in addition to the
axis “c”.
Such a defect has been inexplicitly been explained, however. September, 2012, JFCC, TOYOTA, and TOYOTA Central R&D Labs
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